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| MCR265-4 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. * Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters * 550 Amperes Surge Capability * Blocking Voltage to 800 Volts * Device Marking: Logo, Device Type, e.g., MCR265-4, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = 25 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR265-4 MCR265-6 MCR265-8 MCR265-10 On-State RMS Current (180 Conduction Angles; TC = 70C) Average On-State Current (180 Conduction Angles; TC = 70C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 70C) Forward Peak Gate Power (Pulse Width 1.0 s, TC = 70C) Forward Average Gate Power (t = 8.3 ms, TC = 70C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 70C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 200 400 600 800 IT(RMS) IT(AV) ITSM 55 35 550 Amps Amps Amps 1 Value Unit Volts http://onsemi.com SCRs 55 AMPERES RMS 200 thru 800 VOLTS G A K 4 2 3 TO-220AB CASE 221A STYLE 3 PGM PG(AV) IGM TJ Tstg 20 0.5 2.0 - 40 to +125 - 40 to +150 Watts PIN ASSIGNMENT Watt Amps C C 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION Device MCR265-4 MCR265-6 MCR265-8 MCR265-10 Package TO220AB TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 2 Publication Order Number: MCR265/D MCR265-4 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 0.9 60 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25C TJ = 125C -- -- -- -- 10 2.0 A mA ON CHARACTERISTICS Peak Forward On-State Voltage(1) (ITM = 110 A) Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) (TC = -40C) Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125C) Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 55 A, IGT = 200 mAdc) VTM IGT -- -- VGT VGD IH tgt -- 0.2 -- -- 20 40 1.0 -- 30 1.5 50 90 1.5 -- 75 -- Volts Volts mA s -- 1.5 1.9 Volts mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) (1) Pulse Width dv/dt -- 50 -- V/s p 300 s, Duty Cycle p 2%. http://onsemi.com 2 MCR265-4 Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) 125 121 117 113 109 105 101 97 93 89 85 81 77 73 69 0 TC, MAXIMUM CASE TEMPERATURE ( C) 60 P(AV) , AVERAGE POWER (WATTS) 54 48 42 36 30 24 18 12 6.0 0 4.0 8.0 12 16 20 24 28 32 36 40 0 5.0 10 15 20 25 30 35 40 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)* = CONDUCTION ANGLE = 30 dc 90 60 180 = CONDUCTION ANGLE = 30 dc 60 90 180 Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation http://onsemi.com 3 MCR265-4 Series 2.5 2.0 NORMALIZED GATE CURRENT 1.5 1.0 0.7 0.5 0.4 NORMALIZED GATE VOLTAGE VD = 12 Vdc 2.0 VD = 12 Vdc 1.5 1.0 0.8 3.0 0.5 0.3 0.25 -60 -40 -20 0 20 40 60 80 100 120 140 0.3 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage I TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) 3.0 NORMALIZED HOLDING CURRENT 2.0 VD = 12 Vdc 1000 100 TJ = 25C 10 1.0 0.7 0.5 0.3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 1.0 0 1.0 2.0 3.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Holding Current Figure 6. Typical On-State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 ZJC(t) = RJC * r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10k t, TIME (ms) Figure 7. Thermal Response http://onsemi.com 4 MCR265-4 Series PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE Z -T- B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 MCR265-4 Series Notes http://onsemi.com 6 MCR265-4 Series Notes http://onsemi.com 7 MCR265-4 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MCR265/D |
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